Kybernetika, elektronika, diody, 1N5060, dioda pro všeobecné použití, Urrm, If, Ifsm, Uf, trr, Diotec Semiconductor, GM Electronic spol. s r. o.; 85FR60, YANGZHOU ARK Component Semiconductor, HVM15, vysokonapěťová dioda, RECTRON SEMICONDUCTOR, 1N4448, SEMTECH, SILICON EPITAXIAL PLANAR DIODE, Fast Switching Diode, Absolute Maximum Ratings, Ta, Peak Reverse Voltage, VRM Reverse Voltage, VR, Rectified Current (Average) Half Wave Rectification with Resist. Load at f ≥ 50 Hz, Io, Surge Forward Current at t < 1s and Tj, IFSM, Power Dissipation, Ptot, Storage Temperature Range, TS, Characteristic at Tj, Forward Voltage at IF, VF, Reverse Leakage Current at VR, Reverse Breakdown Voltage at IR, W(BR)R, Capacitance at VF = VR = 0, Reverse Recovery Time, trr, RL, Rectification Efficiency, VRF, ηV, BAV103, MINIMELF, rf, SEMTECH, dynamický odpor v propustném směru, Dynamic Forward Resistance,

Příklady diod